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| ECO-PACTM 2 IGBT Module Short Circuit SOA Capability Square RBSOA F10 A1 Preliminary Data Sheet PSHI 25/12* IC25 = 30 A VCES = 1200 V VCE(sat)typ. = 2.6 V K10 K13 H13 S18 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 82 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H N9 Conditions TVJ = 25C to 150C NTC P18 *NTC optional PSHI 25/12* V V A A A s W Features Maximum Ratings 1200 20 30 21 35 VCES 10 130 * * * * * * VCE = VCES; VGE = 15 V; RG = 82 ; TVJ = 125C non-repetitive TC = 25C Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.6 2.9 3.3 6.5 0.9 3.7 100 100 75 500 70 2.7 2.1 1 VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 25 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C 4.5 V V V mA mA nA ns ns ns ns mJ mJ nF NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling * MOS input, voltage controlled * ultra fast free wheeling diodes * solderable pins for PCB mounting * package with copper base plate * Isolation voltage 3000 V * UL registered, E 148688 Advantages VCE = 0 V; VGE = 20 V * * * * * * * Inductive load, TVJ = 125C VCE = 600 V; IC = 17.5 A VGE = 15/0 V; RG = 82 space and weight savings reduced protection circuits package designed for wave soldering High power density Easy to mount with two screws Typical Applications motor control - DC motor armature winding - DC motor excitation winding - synchronous motor excitation winding supply of transformer primary winding - power supplies - welding - X-ray - UPS - battery charger VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) 1.92 0.96 K/W K/W Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 25/12 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Maximum Ratings 26 17 A A Package style and outline Dimensions in mm (1mm = 0.0394") Conditions IF = 17.5 A; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = 400 A/s; TVJ = 125C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Characteristic Values min. typ. max. 2.48 1.84 16 130 4.6 2.79 V V A ns 2.3 K/W K/W Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. 4.75 5.0 3375 max. 5.25 k K Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. 11.2 11.2 24 max. mm mm g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 25/12 50 A 40 VGE = 17V 15V 13V 50 A 40 30 20 10 0 9V VGE = 17V 15V 13V IC TVJ = 25C 11V IC TVJ = 125C 11V 30 20 10 0 9V 25T120 25T120 0 1 2 3 4 VCE 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 50 A 40 IC VCE = 20V 50 40 A 30 TVJ = 125C TVJ = 25C IF 30 20 TVJ = 125C TVJ = 25C 20 10 25T120 10 0 0 25T120 4 6 8 10 12 VGE 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 20 V 50 trr 200 160 ns 120 TVJ = 125C VR = 600V IF = 15A 15 VGE 40 A VCE = 600V IC = 15A IRM trr 30 20 10 80 40 5 25T120 10 IRM 0 0 25T120 0 20 40 60 80 nC QG 100 0 200 400 600 -di/dt 800 A/s 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 25/12 6 mJ Eon 120 ns td(on) VCE = 600V VGE = 15V RG = 82 TVJ = 125C 6 mJ t Eoff td(off) VCE = 600V VGE = 15V RG = 82 TVJ = 125C 600 ns 400 t Eoff 4 80 4 tr 2 Eon 40 2 t 200 0 25T120 0 10 20 IC 30 A 0 0 f 25T120 0 10 20 IC 30 A 0 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 2,0 mJ t Eoff 1,5 VCE = 600V VGE = 15V IC = 15A TVJ = 125C 3 mJ Eon Eon td(on) tr 150 ns 100 Eoff td(off) 800 ns 600 t 2 1 VCE = 600V VGE = 15V 50 IC = 15A TVJ = 125C 25T120 1,0 400 0,5 200 tf 0 0 20 40 60 80 100 RG 120 140 0 0,0 25T120 0 20 40 60 80 100 RG 120 140 0 Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 K/W ZthJC 1 IGBT diode 40 A ICM 30 0,1 20 0,01 10 RG = 82 TVJ = 125C 0,001 25T120 single pulse 0 0 200 400 600 800 1000 1200 1400 V VCE 0,0001 0,00001 0,0001 0,001 VDI...25-12P1 0,01 0,1 t 1 s 10 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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